1. Guo C., Zhang L., Sartin M., Han L., Tian Z.–W., Tian Z.-Q., Zhan, Photoelectric effect accelerated electrochemical corrosion and nanoimprint processes on gallium arsenide wafers, Chem. Sci., 2019, 10, 5893–5897 2. Han L., Jia Y., Cao Y., Hu Z., Zhao X., Guo S., Yan Y., Tian Z., Zhan D., The coupling effect of slow-rate mechanical motion on the confined etching process in electrochemical mechanical micromachining, Sci China Chem, 2018, 61: 715–724. 3. Zhan D., Han L., Zhang J., He Q., Tian Z.-W., Tian Z.-Q., Electrochemical micro/nano-machining: principles and practices, Chem. Soc. Rev., 2017, 46, 1526—1544. 4. Zhang J., Zhang, L., Wang W., Han L., Jia J., Tian Z.-W.,. Tian Z.-Q, Zhan D., Contact electrification Induced Interfacial Reactions and the Electrochemical Nanoimprint Lithography Directly in n-Type Gallium Arsenate Wafer, Chem. Sci., 2017, 8, 2407–2412. 5. Zhan D., Han L., Zhang J., Shi K., Zhou J.-Z., Tian Z.-W.,. Tian Z.-Q,Confined Chemical Etching for Electrochemical Machining with Nanoscale Accuracy, Acc. Chem. Res. 2016, 49, 2596−2604. 6. Wang W., Zhang J., Wang F., Mao B.-W., Zhan D., Tian Z.-Q., Mobility and Reactivity of Oxygen Adspecies on Platinum Surface, J. Am. Chem. Soc. 2016, 138, 9057−9060. 7. Huang D., Zhu Y., Su Y.-Q., Zhang J., Han L., Wu D.-Y., Tian Z.-Q., Zhan D., Dielectric-dependent electron transfer behavior of cobalt hexacyanides in a solid solution of sodium chloride, Chem. Sci., 2015, 6, 6091-6096. 8. Zhang J., Dong B.-Y., Jia J., Han L., Wang F., Liu C., Tian Z.-Q., Tian Z.-W., Wang D., Zhan D., Electrochemical buckling microfabrication, Chem. Sci., 2016, 7, 697-701. 9. Zhong J.-H., Zhang J., Jin X., Liu J.-Y., Li Q., Li M.-H., Cai W., Wu D.-Y., Zhan D., Ren B., Quantitative Correlation between Defect Density and Heterogeneous Electron Transfer Rate of Single Layer Graphene, J. Am. Chem. Soc. 2014, 136, 16609-16617. 10. Yang D., Han L., Yang Y., Zhao L.-B., Zong C., Huang Y.-F., Zhan D., Tian Z.-Q.,Solid-State Redox Solutions: Microfabrication and Electrochemistry,Angew. Chem. Int. Ed. 2011, 50, 8679-8682 |